Semiconductor module

ABSTRACT

A semiconductor module includes a die pad frame; a semiconductor chip disposed in a chip region on an upper surface of the die pad frame, the semiconductor chip having an upper surface on which a first electrode is disposed and a lower surface on which a second electrode is disposed; a conductive connection member for die pad disposed between the second electrode of the semiconductor chip and the upper surface of the die pad frame, the conductive connection member for die pad electrically connecting the second electrode of the semiconductor chip and the upper surface of the die pad frame; a first clip frame disposed on the upper surface of the semiconductor chip; a first clip conductive connection member disposed between the first electrode on the semiconductor chip and a lower surface of the first clip frame, the first clip conductive connection member electrically connecting the first electrode of the semiconductor chip and the lower surface of the first clip frame; and a sealing resin for sealing the semiconductor chip, the die pad frame, the first clip frame, the first clip conductive connection member, and the conductive connection member for die pad.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of and claims the benefitof priority under 35 U.S.C. § 120 from U.S. application Ser. No.16/093,037, filed on Oct. 11, 2018, which is a U.S. national stageapplication under 35 U.S.C. § 371 of PCT/JP2018/020474, filed on May 29,2018, the entire contents of each of which are incorporated herein byreference.

TECHNICAL FIELD

The present invention relates to semiconductor modules.

BACKGROUND ART

Conventionally known semiconductor modules may include a semiconductorchip, a lead frame electrically connected to the semiconductor chip by abonding wire, a sealing resin for sealing the semiconductor chip and thelead frame, and a die pad frame connected to the semiconductor chip by abonding agent or the like (for example, see JP H06-260572 A and JP2008-311366 A).

Such a semiconductor module has a protrusion at an end portion of thedie pad frame to improve the adhesion between the sealing resin and thedie pad frame.

The semiconductor module, however, has a problem of a crack K and aseparation of the sealing resin H caused at the end portion of the diepad frame DF on which the semiconductor chip is disposed (FIGS. 14 and15).

An end portion of a clip frame CF1 disposed above the semiconductor chipCX in the semiconductor module needs to be insulated from thesemiconductor chip CX.

The end portion of the clip frame CF1 disposed above the semiconductorchip CX also have a problem of a crack Q caused to the sealing resin Hnear the end portion (FIG. 15).

DISCLOSURE OF THE INVENTION Problem to be Solved by the Invention

Under the circumstance, it is an object of the present invention toprovide a semiconductor module capable of preventing occurrence of acrack or a separation of a sealing resin while improving insulationbetween a clip frame and a semiconductor chip in an area at an endportion of the clip frame that is disposed above the semiconductor chip.

Solution to Problem

A semiconductor module, according to an embodiment of an aspect of thepresent invention, comprising:

-   -   a die pad frame;    -   a semiconductor chip disposed in a chip region on an upper        surface of the die pad frame, the semiconductor chip having an        upper surface on which a first electrode is disposed and a lower        surface on which a second electrode is disposed;    -   a conductive connection member for die pad disposed between the        second electrode of the semiconductor chip and the upper surface        of the die pad frame, the conductive connection member for die        pad electrically connecting the second electrode of the        semiconductor chip and the upper surface of the die pad frame;    -   a first clip frame disposed on the upper surface of the        semiconductor chip;    -   a first clip conductive connection member disposed between the        first electrode on the semiconductor chip and a lower surface of        the first clip frame, the first clip conductive connection        member electrically connecting the first electrode of the        semiconductor chip and the lower surface of the first clip        frame; and    -   a sealing resin for sealing the semiconductor chip, the die pad        frame, the first clip frame, the first clip conductive        connection member, and the conductive connection member for die        pad,    -   wherein a dip locking part is disposed at an end portion of an        upper surface of the first clip frame, the clip locking part        being partially above the upper surface of the first clip frame        so as to be away from the upper surface of the semiconductor        chip, and    -   wherein a groove is formed on a lower surface of the clip        locking part.

In the semiconductor module,

-   -   wherein a cross section of the groove perpendicularly taken        relative to a length direction of the groove, along which the        groove extends on the lower surface of the clip locking part,        has a V shape.

In the semiconductor module,

-   -   wherein the groove on the lower surface of the clip locking part        is formed by laser irradiation or pressing.

In the semiconductor module,

-   -   wherein the groove on the lower surface of the clip locking part        is disposed around a perimeter of the end portion of the upper        surface of the first clip frame.

In the semiconductor module,

-   -   wherein the clip locking part is continuously disposed around        the perimeter of the end portion of the upper surface of the        first clip frame.

In the semiconductor module,

-   -   wherein two or more grooves are formed on the lower surface of        the clip locking part around the perimeter of the end portion of        the upper surface of the first clip frame.

In the semiconductor module,

-   -   wherein the clip locking part has a protruding part that        protrudes from the end portion of the upper surface of the first        clip frame.

In the semiconductor module,

-   -   wherein the clip locking part has two or more protruding part        that protrude from the end portion of the upper surface of the        first dip frame in a stepwise manner.

In the semiconductor module,

-   -   wherein an end of the clip locking part has a rectangular shape        or a curved shape.

In the semiconductor module,

-   -   wherein the clip locking part is formed by pressing the end        portion of the upper surface of the first clip frame upward.

In the semiconductor module,

-   -   wherein the sealing resin has a linear expansion coefficient        that is smaller than the linear expansion coefficient of the die        pad frame and the first clip frame, and greater than the linear        expansion coefficient of the semiconductor chip.

In the semiconductor module,

-   -   wherein a third electrode that has a smaller upper surface area        than the first electrode is disposed on the upper surface of the        semiconductor chip, and    -   wherein the semiconductor module further comprises:    -   a second clip frame that is disposed on the upper surface of the        semiconductor chip to be adjacent to the first clip frame, the        second clip frame having a smaller upper surface area than the        first clip frame; and    -   a second clip conductive connection member electrically        connecting the third electrode of the semiconductor chip and a        lower surface of the second clip frame.

In the semiconductor module,

-   -   wherein the semiconductor chip is an MOS transistor,    -   wherein the first electrode is a source electrode of the MOS        transistor,    -   wherein the second electrode is a drain electrode of the MOS        transistor, and    -   wherein the third electrode is a gate electrode of the MOS        transistor.

In the semiconductor module,

-   -   wherein the first clip conductive connection member, the second        clip conductive connection member, and the conductive connection        member for die pad are soldering material members.

In the semiconductor module,

-   -   wherein the die pad frame has a protrusion disposed on an upper        side of an end portion of a main body of the die pad frame and        protruding from an upper surface of the main body of the die pad        frame in a direction parallel to a direction in which the upper        surface of the main body of the die pad frame extends, the        protrusion improving adhesion with the sealing resin, and    -   wherein a locking portion is disposed on a tip portion of the        protrusion, the locking portion being partially above an upper        surface of the protrusion.

In the semiconductor module,

-   -   wherein the protrusion of the die pad frame has one or more        laser grooves on the upper surface, the one or more grooves        being formed by laser irradiation so as to extend along the end        portion of the main body of the die pad frame.

In the semiconductor module,

-   -   wherein the one or more laser grooves on the upper surface of        the protrusion have a cross section taken along a direction        perpendicular to a length direction along which the one or more        laser grooves extend, the cross section having a V shape or a U        shape, and    -   wherein a bottom of a first laser groove among the one or more        laser grooves is positioned to be closer to a chip region where        the semiconductor chip is disposed than a center of a width of        the first laser groove.

In the semiconductor module,

-   -   wherein a direction of the laser irradiation relative to a        groove region of the upper surface of the protrusion where the        first laser groove is formed is slanted from a perpendicular        line passing through the groove region of the upper surface of        the projection toward the locking portion.

In the semiconductor module,

-   -   wherein the one or more laser grooves on the upper surface of        the protrusion have a cross section taken along a direction        perpendicular to a length direction in which the one or more the        laser grooves extend, the cross section having a V shape or a U        shape, and    -   wherein a bottom of a second laser groove among the one or more        laser groove is positioned to be closer to the locking portion        than a center of a width of the second laser groove.

In the semiconductor module,

-   -   wherein a direction of the laser irradiation relative to the        groove region of the upper surface of the protrusion where the        second laser groove is formed is slanted from a perpendicular        line passing through the groove region of the upper surface of        the protrusion toward the chip region where the semiconductor        chip is disposed.

In the semiconductor module,

-   -   wherein the laser irradiation roughens inner surfaces and edge        portions of the one or more laser grooves to prevent the        conductive connection member for die pad on the upper surface of        the die pad frame from spreading by getting wet.

In the semiconductor module,

-   -   wherein the die pad frame has a first side, a second side, one        end of which intersects one end of the first side, a third side,        one end of which intersects another end of the first side, and a        fourth side, one end of which intersects another side of the        second side and another side of which intersects another end of        the third side,    -   wherein the protrusion and the locking portion are formed in a        region along the first side, the second side, and the third        side, and not formed in a region along the fourth side,    -   wherein the region along the fourth side of the upper surface of        the die pad frame has a through-hole passing through the main        body and improving adhesion with the sealing resin,    -   wherein the one or more laser grooves are formed by the laser        irradiation on the upper surface of the protrusion along the        first side, the second side, and the third side of the die pad        frame, and    -   wherein one or more additional laser grooves are formed by laser        irradiation along the fourth side between the region where the        through-hole is formed and the chip region.

In the semiconductor module,

-   -   wherein the one or more laser grooves are sequentially disposed        along the first side, the second side, and the third side of the        die pad frame, and    -   wherein the number of additional laser grooves is greater than        the number of lines formed by the one or more laser grooves.

In the semiconductor module,

-   -   wherein the one or more laser grooves are in communication with        the one or more additional laser groove to surround a perimeter        of the chip region of the die pad frame where the semiconductor        chip is disposed.

In the semiconductor module,

-   -   wherein a conductive metal material of the die pad frame is a        copper-based alloy or a copper-based alloy to which a different        metal selected from Sn, Zn, Fe, Cr, and Ni is added, and wherein        a surface of the die pad frame are not plated.

In the semiconductor module,

-   -   wherein a difference in height between the lower surface of the        locking portion and the lower surface of the protrusion is        greater than a difference in height between the upper surface of        the locking portion and the upper surface of the protrusion.

In the semiconductor module,

-   -   wherein the lower surface of the locking portion slopes upward        to an end portion of the locking portion.

In the semiconductor module,

-   -   wherein the lower surface of the clip locking part slopes upward        to an end of the clip locking part.

In the semiconductor module,

-   -   wherein an upper surface of the clip locking part slopes        downward to the end of the clip locking part.

In the semiconductor module,

-   -   wherein an end the portion of a lower surface of the protrusion        connecting to a lower surface of the locking portion has a        curved shape.

In the semiconductor module,

-   -   wherein an end portion of a lower surface of the locking portion        has a curved shape.

Effects of the Invention

A semiconductor module in an aspect of the present invention includes:

-   -   a die pad frame;    -   a semiconductor chip disposed in a chip region on an upper        surface of the die pad frame, the semiconductor chip having an        upper surface on which a first electrode is disposed and a lower        surface on which a second electrode is disposed;    -   a conductive connection member for die pad disposed between the        second electrode of the semiconductor chip and an upper surface        of the die pad frame, the conductive connection member for die        pad electrically connecting the second electrode of the        semiconductor chip and the upper surface of the die pad frame;    -   a first clip frame disposed on the upper surface of the        semiconductor chip;    -   a first clip conductive connection member disposed between the        first electrode on the semiconductor chip and a lower surface of        the first clip frame, the first clip conductive connection        member electrically connecting the first electrode of the        semiconductor chip and the lower surface of the first clip        frame; and    -   a sealing resin for sealing the semiconductor chip, the die pad        frame, the first clip frame, the first clip conductive        connection member, and the conductive connection member for die        pad.

A clip locking part is disposed at an end portion of an upper surface ofthe first clip frame, the clip locking part being partially above theupper surface of the first clip frame so as to be away from the uppersurface of the semiconductor chip.

A groove is formed on a lower surface of the clip locking part.

Since the end portion of the first clip frame is separated from thesemiconductor chip, the end portion of the first clip frame may besufficiently insulated with respect to the semiconductor chip.

In a region near the clip locking part at the end portion of the firstclip frame, the groove of the clip locking part prevents the sealingresin from shrinking, and in turn prevents the occurrence of a crack ora separation to the sealing resin.

Thus, the semiconductor module according to the present invention iscapable of improving the insulation between the semiconductor chip andthe clip frame disposed on the semiconductor chip in a region near theend portion or the clip frame, while preventing the sealing resin fromcracking or separating.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a top view illustrating an example of an externalappearance of a semiconductor module 100 according to a firstembodiment.

FIG. 2 is a bottom view of the example of the external appearance of thesemiconductor module 100 shown in FIG. 1.

FIG. 3 is a side view of the example of the external appearance of thesemiconductor module 100 shown in FIG. 1 viewed from a direction that isopposite to a first direction D1.

FIG. 4 is a side view of the example of the external appearance of thesemiconductor module 100 shown in FIG. 1, viewed from a second directionD2.

FIG. 5 is a side view of the example of the external appearance of thesemiconductor module 100 shown in FIG. 1 viewed from the first directionD1.

FIG. 6 is a top view illustrating an example of an internal appearanceof the semiconductor module 100 shown in FIG. 1.

FIG. 7 is a cross-sectional view illustrating an example of a crosssection of the semiconductor module shown in FIG. 6 taken along lineN-N.

FIG. 8 is a cross-sectional view illustrating another example of thecross section of the semiconductor module shown in FIG. 6 taken alongline N-N.

FIG. 9 is a cross-sectional view illustrating an example of a crosssection of a semiconductor module according to a second embodiment.

FIG. 10 is a cross-sectional view illustrating another example of thecross section of the semiconductor module according to the secondembodiment.

FIG. 11 is a top view illustrating an example of a configuration on anupper surface of a die pad frame DF included in the semiconductor moduleaccording to the second embodiment.

FIG. 12 is a cross-sectional view of the die pad frame DF, illustratingan example of a process of forming a laser groove LM on the uppersurface of the projection T of the die pad frame DF by laserirradiation.

FIG. 13 is a cross-sectional view of the die pad frame DF, illustratingan example of a process of forming first and second laser grooves LMaand LMb on the upper surface of the projection T of the die pad frame DFby laser irradiation.

FIG. 14 is a top view illustrating an example of an appearance of theconventional semiconductor module.

FIG. 15 is a cross-sectional view illustrating an example of a crosssection of the conventional semiconductor module shown in FIG. 14 takenalong line N-N.

EMBODIMENTS FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will now be described withreference the accompanying drawings.

First Embodiment

FIG. 1 shows a top view illustrating an example of an externalappearance of a semiconductor module 100 according to a firstembodiment. FIG. 2 is a bottom view of the example of the externalappearance of the semiconductor module 100 shown in FIG. 1. FIG. 3 is aside view of the example of the external appearance of the semiconductormodule 100 shown in FIG. 1 viewed from a direction that is opposite to afirst direction D1. FIG. 4 is a side view of the example of the externalappearance of the semiconductor module 100 shown in FIG. 1, viewed froma second direction D2. FIG. 5 is a side view of the example of theexternal appearance of the semiconductor module 100 shown in FIG. 1viewed from the first direction D1. FIG. 6 is a top view illustrating anexample of an internal appearance of the semiconductor module 100 shownin FIG. 1. FIG. 7 is a cross-sectional view illustrating an example of across section of the semiconductor module shown in FIG. 6 taken alongline N-N. FIG. 8 is a cross-sectional view illustrating another exampleof the cross section of the semiconductor module shown in FIG. 6 takenalong line N-N. In FIG. 6, the sealing member A is illustrated as atransparent member.

As shown in FIGS. 1 to 8, for example, the semiconductor module 100according to the first embodiment includes a die pad frame (lead frame)DF, a semiconductor chip CX, a conductive connection member for die padA2, a sealing resin H, a first clip frame CF1, a first clip conductiveconnection member A1, a second clip frame CF2, and a second clipconductive connection member A3.

In this embodiment, the semiconductor module 100 functions as athree-terminal semiconductor device (MOS transistor).

The semiconductor chip CX is disposed in a chip region CXa on an uppersurface of the die pad frame DF.

A first electrode (source electrode) S is disposed on an upper surface,and a second electrode (drain electrode) D is disposed on a lowersurface of the semiconductor chip CX. A third electrode (gate electrode)G that has a smaller upper surface area than the first electrode S isalso disposed on the upper surface of the semiconductor chip CX.

In this embodiment, the semiconductor chip CX is a MOS transistor, forexample. In this case, the first electrode S is a source electrode ofthe MOS transistor, the second electrode D is a drain electrode of theMOS transistor, and the third electrode G is a gate electrode of the MOStransistor.

The conductive connection member for die pad A2 is disposed between thesecond electrode D of the semiconductor chip CX and the upper surface ofthe die pad frame DF.

The conductive connection member for die pad A2 electrically connectsthe second electrode D of the semiconductor chip CX and the uppersurface of the die pad frame DF.

The conductive connection member for die pad A2 is, for example, asoldering material member.

As shown in FIGS. 6 and 7, for example, the first clip frame CF1 isdisposed on the upper surface of the semiconductor chip CX.

The first clip frame CF1 has terminals CF1 a, CF1 b, and CF1 cprotruding from the sealing resin H, as shown in FIGS. 1 to 6, forexample.

The first clip frame CF1 has an upper surface CF1E, at an end of which aclip locking part DY is disposed. A part of the clip locking part DYprotrudes from the upper surface of the semiconductor chip CX so as tobe above the upper surface CF1E of the first clip frame CF1, as shown inFIGS. 6 and 7, for example.

The clip locking part DY performs a mold lock of the sealing resin Hnear the end of the upper surface CF1E of the first clip frame CF1.

In particular in FIGS. 7 and 8, the lower surface of the clip lockingpart DY has grooves DM.

The cross section of the grooves DM taken along a line that isperpendicular to a direction along which the grooves DM extend on thelower surface of the clip locking part DY has a V shape.

The grooves DM are formed by laser irradiation or pressing on the lowersurface of the clip locking part DY.

The grooves DM on the lower surface of the clip locking part DY extendalong the perimeter of the upper surface CF1E of the first dip frameCF1. The dip locking part DY continuously surrounds the perimeter of theupper surface CF1E of the first dip frame CF1.

As shown in FIGS. 7 and 8, for example, the multiple grooves DM aredisposed to be parallel to each other on the lower surface of the diplocking part DY along the perimeter of the upper surface CF1E of thefirst clip frame CF1.

Although there are two groove DMs in the example shown in FIGS. 7 and 8,the number of grooves DM may be one, or three or more.

The clip locking part DY may have a protruding part (step) thatprotrudes from the end of the upper surface CF1E of the first clip frameCF1.

The clip locking part DY may have two or more protruding parts (steps)that protrude from the end of the upper surface CF1E of the first clipframe CF1 in a stepwise manner.

An end Da of the clip locking part DY may have a rectangular shape or acurved shape.

The clip locking part DY may be formed by pressing up the end portion ofthe upper surface CF1E of the first clip frame CF1, for example.

The first clip frame CF1 has four projecting portions (dowel portions)CF1D formed by pressing the first clip frame CF1 from above, as shown inFIG. 6, for example. The four projecting portions CF1D are in contactwith the first electrode (source electrode) S on the upper surface ofthe semiconductor chip CX directly or via the first clip conductiveconnection member A1.

The first dip conductive connection member A1 is disposed between thefirst electrode S of the semiconductor chip CX and the lower surface ofthe first clip frame CF1, as shown in, for example, FIGS. 7 and 8.

The first dip conductive connection member A1 electrically connects thefirst electrode S of the semiconductor chip CX and the lower surface ofthe first clip frame CF1.

The first clip conductive connection member A1 is a soldering materialmember, for example.

The second clip frame CF2 is disposed on the upper surface of thesemiconductor chip CX to be adjacent to the first clip frame CF1.

The second clip frame CF2 has a terminal CF2 a protruding from thesealing resin H.

The second clip frame CF2 has a smaller upper surface area than thefirst clip frame CF1.

The second clip conductive connection member A3 electrically connectsthe third electrode G of the semiconductor chip CX and the lower surfaceof the second clip frame CF2.

The second clip conductive connection member A3 is a soldering materialmember, for example.

The sealing resin H seals the semiconductor chip CX, the die pad frameDF, the first clip frame CF1, the first clip conductive connectionmember A1, the second clip frame CF2, the second clip conductiveconnection member A3, and the conductive connection member for die padA2.

The linear expansion coefficient of the sealing resin H is set to besmaller than that of the die pad frame DF and the first clip frame CF1,and greater than that of the semiconductor chip CX, for example.

The die pad frame (lead frame) DF has a first side DF1, a second sideDF2, one end of which intersects one end of the first side DF1, a thirdside DF3, one end of which intersects the other end of the first sideDF1, and a fourth side DF, one end of which intersects the other end ofthe second side DF2 and the other end of which intersects the other endof the third side DF3.

Thus, the die pad frame DF has a substantially rectangular shape.

The die pad frame DF has a projection T intended to improve the adhesionwith the sealing resin H.

The projection T is disposed on an upper side of an end Ba of a mainbody B of the die pad frame DF and protrudes from the upper surface ofthe main body B of the die pad frame DF in a direction that is parallelto the upper surface of the main body B of the die pad frame DF (forexample, a second direction D2), as shown in FIGS. 6 and 7.

With this structure, the projection T may improve the adhesion betweenthe die pad frame DF and the sealing resin H.

The projection T has, at its end, a locking portion U that is partiallylocated above the upper surface of the projection T.

The locking portion U has a step portion Ub that protrudes upward froman upper surface of an end Ta of the projection T, as shown in FIG. 7,for example. The locking portion U may also have a step portion Uc onits lower surface by which the edge portion is raised.

The sealing resin H near the upper surface of the end portion of theprojection T may be locked in this manner to complete the mold lock.

The step portion Ub of the locking portion U is formed by pressingupward the end portion of the projection T, for example.

The locking portion U may have two or more step portions Ub thatprotrude from the upper surface of the end portion Ta of the projectionT sequentially (in a stepwise manner). Furthermore, the locking portionU may have two or more step portions Uc that are provided on the lowersurface in a stepwise manner.

This allows the sealing resin H around the upper surface of the endportion of the projection T to be locked by the two or more stepportions Ub protruding upward from the upper surface of the end portionof the projection T in a stepwise manner to surely complete the moldlock.

The step portions Ub of the locking portion U are formed by pressing theend portion of the projection T several times, for example.

The height of the top part of the locking portion U may be higher thanthe height of the top part of the conductive connection member for diepad A2 so as to block the flow of the conductive connection member fordie pad A2, as shown in FIGS. 7 and 8, for example.

The length of the locking portion U in the direction along which theprojection T extends (for example, the second direction D2) is set to beshorter than the length of the projection T excluding the lockingportion U, as shown in FIGS. 7 and 8, for example. If necessary, thelength of the locking portion U may be longer than the length of theprojection T excluding the locking portion U.

An end Ua of the locking portion U has a rectangular shape or a curvedshape.

The die pad frame DF is formed of a conductive metal material, which isa copper (Cu)-based alloy or a copper (Cu)-based alloy to which adifferent metal such as Sn, Zn, Fe, Cr, or Ni is added. Although thesurface of the die pad frame DF is not plated, it may be plated ifnecessary.

This enables the die pad frame DF to be formed easily.

The projection T continuously surrounds the perimeter of the end Ba ofthe upper surface of the main body B of the die pad frame DF (along thefirst, second, and third sides DF1, DF2, and DF3) as shown in FIG. 6,for example.

As shown in FIG. 6, the projection T and the locking portion U aredisposed in a region along the first, second, and third sides DF1, DF2,and DF3, but not disposed in a region along the fourth side DF4.

Furthermore, as shown in FIG. 6, through-holes Z are disposed in theregion of the upper surface of the die pad frame DF along the fourthside DF4, the through-hole Z penetrating the main body B and beingintended to improve the adhesion of the die pad frame DF with thesealing resin H.

In the through-hole Z, the thickness of the die pad frame DF on the sidesealed by the sealing resin H is the same as the thickness of theprojection T (that is a half of the thickness of the central portion ofthe die pad frame DF). This improves the adhesion of the die pad frameDF and the sealing resin H.

The locking portion U may have the same thickness as the projection T,for example.

The height Uch of the step portion Uc between the lower surface U1 ofthe locking portion U and the lower surface T1 of the projection T maybe greater than the height Ubh of the step portion Ub between the uppersurface U2 of the locking portion U and the upper surface T2 of theprojection T (FIG. 7).

The lower surface U1 of the locking portion U may slope upward to theend of the locking portion U (the region UR in FIG. 7). This may reducethe stress of the sealing resin H.

The clip locking part DY disposed at the end portion of the uppersurface CF1E of the first clip frame CF1 is partially above the uppersurface CF1E of the first clip frame CF1 to be away from the uppersurface of the semiconductor chip CX. The lower surface DY1 of the cliplocking part DY may slope upward to the end of the clip locking part DY(the region DYR1 in FIG. 7). This may improve the insulation between theclip locking part DY and the lower surface DY1 of the semiconductor chipCX further.

The upper surface DY2 of the clip locking part DY may slope downward tothe end of the clip locking part DY (the region DYR2 in FIG. 7). Thismay reduce the stress of the sealing resin H at the end portion of theclip locking part DY and improve the adhesion between the end portion ofthe clip locking part DY and the sealing resin H.

An end Tb of the lower surface of the projection T connecting to thelower surface U1 of the locking portion U (FIG. 7) may have a curvedshape instead of a rectangular shape. This may reduce the stress of thesealing resin H at the end Tb of the projection T.

An end portion Ud of the lower surface U1 of the locking portion U (FIG.7) may have a curved shape instead of a rectangular shape. This mayreduce the stress of the sealing resin H at the end Ud of the lockingportion U.

As described above, in the semiconductor module 100 having theabove-described structure, the locking portion U at the end of theprojection T of the die pad frame may block the conductive connectionmember for die pad.

The locking portion U may prevent the sealing resin from shrinking in aregion near the end of the projection T of the die pad frame, and inturn prevent the sealing resin from cracking or separating.

Thus, the semiconductor module according to the first embodiment iscapable of improving the insulation between the semiconductor chip andthe clip frame disposed on the semiconductor chip in a region near theend of the clip frame, while preventing the sealing resin from crackingor separating.

Furthermore, the semiconductor module according to the first embodimentis capable of preventing the flow of the conductive connection memberthat electrically connects the semiconductor chip and the die pad framein a region at the end of the die pad frame, while preventing theoccurrence of a crack or separation of the sealing resin at an endportion of the die pad frame.

Second Embodiment

A second embodiment having a structure in which a laser groove isprovided to the upper surface of the projection T of the die pad frameDF included in the semiconductor module will be described below.

FIG. 9 is a cross-sectional view illustrating an example of a crosssection of a semiconductor module according to a second embodiment. FIG.10 is a cross-sectional view illustrating another example of the crosssection of the semiconductor module according to the second embodiment.FIG. 11 is a top view illustrating an example of a configuration on anupper surface of a die pad frame DF included in the semiconductor moduleaccording to the second embodiment. FIG. 12 is a cross-sectional view ofthe die pad frame DF, illustrating an example of a process of forming alaser groove LM on the upper surface of the projection T of the die padframe DF by laser irradiation. FIG. 13 is a cross-sectional view of thedie pad frame DF, illustrating an example of a process of forming firstand second laser grooves LMa and LMb on the upper surface of theprojection T of the die pad frame DF by laser irradiation.

The cross sections of the semiconductor module shown in FIGS. 9 and 10are obtained by providing additional grooves to the cross section of thefirst embodiment taken along line N-N of FIG. 6.

The die pad frame DF of the semiconductor module according to the secondembodiment shown in FIG. 11 may be applied to the semiconductor module100 according to the first embodiment shown in FIGS. 1 to 6.

As shown in FIGS. 9 to 11 for example, one or more laser grooves LM(LM1, LM2, LM3) are formed by laser irradiation on the upper surface ofthe projection T of the die pad frame DF along the end Ba of the mainbody B of the die pad frame DF.

The cross section of the laser grooves LM in a direction perpendicularto the direction along which the laser grooves LM extend on the uppersurface of the projection T (for example, the first direction D1 shownin FIGS. 9 and 10) has a V shape.

However, the cross section of the laser grooves LM in a directionperpendicular to the direction along which the laser grooves LM extendon the upper surface of the projection T (for example, the firstdirection D1 shown in FIGS. 9 and 10) may have a U shape.

The die pad frame DF has a first side DF1, a second side DF2, one end ofwhich intersects one end of the first side DF1, a third side DF3, oneend of which intersects the other end of the first side DF1, and afourth side DF, one end of which intersects the other end of the secondside DF2 and the other end of which intersects the other end of thethird side DF3, as shown in FIG. 11, for example.

The die pad frame DF thus has a substantially rectangular shape as inthe first embodiment.

The projection T and the locking portion U are disposed in a regionalong the first, second, and third sides DF1, DF2, and DF3, but notdisposed in a region along the fourth side DF4, as shown in FIG. 11.

A through-hole Z is disposed in the region of the upper surface of thedie pad frame DF along the fourth side DF4 as shown in FIG. 11, thethrough-hole Z penetrating the main body B and being intended to improvethe adhesion of the die pad frame DF with the sealing resin H.

In the second embodiment, the laser grooves LM (LM1, LM2, LM3) areformed by laser irradiation on the upper surface of the projection Talong the first, second, and the third side DF1, DF2, DF3 of the die padframe DF, as shown in FIG. 11.

Also in the second embodiment, additional laser grooves LM4 a, LM4 b,LM4 c, and LM4 d are formed by laser irradiation along the fourth sideDF4 between the region where the through-hole Z is formed and the chipregion CX, as shown in FIG. 11.

Although the example shown in FIG. 11 includes four additional lasergrooves, the number of additional laser grooves may be one to three, orfive or more.

The laser grooves LM1, LM2, LM3 are sequentially disposed along thefirst, second, and third sides DF1, DF2, and DF3 of the die pad frame DFas shown in FIG. 11, for example.

The number of additional laser grooves LM4 a, LM4 b, LM4 c, and LM4 d(four in FIG. 11) is set to be larger than the number of lines formed bysequentially disposed laser grooves LM1, LM2, and LM3 (one in FIG. 11).

As shown in FIG. 11, for example, the line formed by the sequentiallydisposed laser grooves LM1, LM2, and LM3 is connected to the additionallaser groove LM4 a so as to surround the perimeter of the chip regionCXa of the die pad frame DF where the semiconductor chip CX id disposed.

As in the first embodiment, the conductive metal material of the die padframe DF is a copper (Cu)-based alloy or a copper (Cu)-based alloy towhich a different metal such as Sn, Zn, Fe, Cr, or Ni is added. Althoughthe surface of the die pad frame DF is not plated, it may be plated ifnecessary.

This enables the die pad frame DF to be formed easily.

As shown in FIG. 12, for example, when the laser grooves LM are formed,the direction of laser irradiation DL relative to a groove region DX onthe upper surface of the projection T where the laser grooves LM areformed is set to be parallel to a perpendicular line P passing throughthe groove region DX on the upper surface of the projection T.

As a result, the cross section of the laser grooves LM substantiallyhave a V shape in which the bottom is located on the center of the widthof the laser groove LM (for example, the width in the second directionD2).

The laser irradiation roughens the inner surfaces and the edge portionsof the laser grooves LM. The roughness prevents the conductiveconnection member for die pad A2 from spreading by getting wet on theupper surface of the die pad frame DF.

As shown in FIG. 13, for example, the bottom LMas of a first lasergroove LMa among the laser grooves LM may be located to be closer to thechip region CXa where the semiconductor chip CX is disposed than thecenter LMam in the width of the first laser groove LMa (for example, thewidth in the second direction D2).

The mold lock of the sealing resin H may be performed more reliably inthis manner.

The direction DLa of the laser irradiation relative to the groove regionDX on the upper surface of the projection T to form the first lasergroove LMa in the above-described manner is slanted from theperpendicular line P that passes through the groove region DX on theupper surface of the projection T toward the locking portion U, as shownin FIG. 13, for example.

This allows the first laser groove LMa to be formed so that the bottomLMas is closer to the chip region CXa than the center LMam in the widthof the first laser groove LMa (for example, the width in the seconddirection D2).

Furthermore, as shown in FIG. 13, for example, the bottom LMbs of asecond laser groove LMb among the laser grooves LM may be located to becloser to the locking portion U than to the center LMbm of the width ofthe second laser groove LMb (for example, the width in the seconddirection D2).

This may block the flow of the conductive connection member for die padA2 more reliably, for example.

The direction DLb of the laser irradiation relative to the groove regionDX on the upper surface of the projection T to form the second lasergroove LMb in the above-described manner is slated from theperpendicular line P that passes through the groove region DX on theupper surface of the projection T toward the chip region CXa where thesemiconductor chip CX is disposed, as shown in FIG. 13, for example.

This allows the second laser groove LMb to be formed so that the bottomLMbs is closer to the locking portion U than the center LMbm in thewidth of the second laser groove LMb (for example, the width in thesecond direction D2).

The other members of the semiconductor module according to the secondembodiment are the same as those of the first embodiment.

Thus, the semiconductor module according to the second embodiment iscapable of improving the insulation between the semiconductor chip andthe clip frame disposed on the semiconductor chip in a region near theend of the clip frame, while preventing the sealing resin from crackingor separating.

Furthermore, the semiconductor module according to the second embodimentis capable of preventing the flow of a conductive connection member thatelectrically connects the semiconductor chip and the die pad frame in aregion at the end of the die pad frame, while preventing the occurrenceof a crack or separation of the sealing resin at an end portion of thedie pad frame.

Third Embodiment

In the first embodiment, the semiconductor chip CX is an MOSFET.However, other semiconductor elements may also be used.

Specifically, the semiconductor chip CX may be a diode, an insulatedgate bipolar transistor (IGBT), or other FETs.

The other elements of the semiconductor module according to the thirdembodiment are the same as those of the first embodiment or the secondembodiment.

Thus, the semiconductor module according to the third embodiment iscapable of improving the insulation between the semiconductor chip andthe clip frame disposed on the semiconductor chip in a region near theend of the clip frame, while preventing the sealing resin from crackingor separating.

Furthermore, the semiconductor module according to the third embodimentis capable of preventing the flow of the conductive connection memberthat electrically connects the semiconductor chip and the die pad framein a region at the end of the die pad frame, while preventing theoccurrence of a crack or separation of the sealing resin at an endportion of the die pad frame.

A semiconductor module in an aspect of the present invention includes:

-   -   a die pad frame;    -   a semiconductor chip disposed in a chip region on an upper        surface of the die pad frame, the semiconductor chip having an        upper surface on which a first electrode is disposed and a lower        surface on which a second electrode is disposed;    -   a conductive connection member for die pad disposed between the        second electrode of the semiconductor chip and an upper surface        of the die pad frame, the conductive connection member for die        pad electrically connecting the second electrode of the        semiconductor chip and the upper surface of the die pad frame;    -   a first clip frame disposed on the upper surface of the        semiconductor chip;    -   a first clip conductive connection member disposed between the        first electrode on the semiconductor chip and a lower surface of        the first clip frame, the first clip conductive connection        member electrically connecting the first electrode of the        semiconductor chip and the lower surface of the first dip frame;        and    -   a sealing resin for sealing the semiconductor chip, the die pad        frame, the first clip frame, the first clip conductive        connection member, and the conductive connection member for die        pad.

A clip locking part is disposed at an end portion of an upper surface ofthe first clip frame, the clip locking part being partially above theupper surface of the first clip frame so as to be away from the uppersurface of the semiconductor chip.

A groove is formed on a lower surface of the clip locking part.

Since the end portion of the first clip frame is separated from thesemiconductor chip, the end portion of the first clip frame may besufficiently insulated with respect to the semiconductor chip.

In a region near the clip locking part at the end portion of the firstclip frame, the groove of the clip locking part prevents the sealingresin from shrinking, and in turn prevents the occurrence of a crack ora separation to the sealing resin.

Thus, the semiconductor module according to the present invention iscapable of improving the insulation between the semiconductor chip andthe clip frame disposed on the semiconductor chip in a region near theend portion or the clip frame, while preventing the sealing resin fromcracking or separating.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. The embodiments may be embodied in a variety ofother forms. Furthermore, various omissions, substitutions and changesin the form of the methods and systems described herein may be madewithout departing from the spirit of the inventions. The embodiments andtheir modifications are included in the scope and the subject matter ofthe invention, and at the same time included in the scope of the claimedinventions and their equivalents.

EXPLANATION OF REFERENCES

-   100: semiconductor module-   DF: die pad frame (lead frame)-   CX: semiconductor chip-   A2: conductive connection member for die pad-   H: sealing resin-   CF1: first clip frame-   A1: first clip conductive connection member-   CF2: second clip frame-   A3: second clip conductive connection member-   DF1: first side-   DF2: second side-   DF3: third side-   DF4: fourth side-   T: protrusion-   B: main body-   LM: laser groove-   LM1, LM2, LM3: laser groove-   LM4 a, LM4 b, LM4 c, LM4 d: additional laser groove

1. A semiconductor module comprising: a die pad frame; a semiconductorchip disposed in a chip region on an upper surface of the die pad frame,the semiconductor chip having an upper surface on which a firstelectrode is disposed and a lower surface on which a second electrode isdisposed; a conductive connection member for die pad disposed betweenthe second electrode of the semiconductor chip and the upper surface ofthe die pad frame, the conductive connection member for die padelectrically connecting the second electrode of the semiconductor chipand the upper surface of the die pad frame; a first clip frame disposedon the upper surface of the semiconductor chip; a first clip conductiveconnection member disposed between the first electrode on thesemiconductor chip and a lower surface of the first clip frame, thefirst clip conductive connection member electrically connecting thefirst electrode of the semiconductor chip and the lower surface of thefirst clip frame; and a sealing resin for sealing the semiconductorchip, the die pad frame, the first clip frame, the first clip conductiveconnection member, and the conductive connection member for die pad,wherein a clip locking part is disposed at an end portion of an uppersurface of the first clip frame, the clip locking part being partiallyabove the upper surface of the first clip frame so as to be away fromthe upper surface of the semiconductor chip, wherein a groove is formedon a lower surface of the clip locking part, wherein the die pad framehas a protrusion disposed on an upper side of an end portion of a mainbody of the die pad frame and protruding from an upper surface of themain body of the die pad frame in a direction parallel to a direction inwhich the upper surface of the main body of the die pad frame extends,the protrusion improving adhesion with the sealing resin, wherein alocking portion is disposed on a tip portion of the protrusion, thelocking portion being partially above an upper surface of theprotrusion, and wherein the protrusion of the die pad frame has one ormore laser grooves on the upper surface, the one or more grooves beingformed by laser irradiation so as to extend along the end portion of themain body of the die pad frame.
 2. The semiconductor module according toclaim 1, wherein the one or more laser grooves on the upper surface ofthe protrusion have a cross section taken along a directionperpendicular to a length direction along which the one or more lasergrooves extend, the cross section having a V shape or a U shape, andwherein a bottom of a first laser groove among the one or more lasergrooves is positioned to be closer to a chip region where thesemiconductor chip is disposed than a center of a width of the firstlaser groove.
 3. The semiconductor module according to claim 2, whereina direction of the laser irradiation relative to a groove region of theupper surface of the protrusion where the first laser groove is formedis slanted from a perpendicular line passing through the groove regionof the upper surface of the projection toward the locking portion. 4.The semiconductor module according to claims 1, wherein the one or morelaser grooves on the upper surface of the protrusion have a crosssection taken along a direction perpendicular to a length direction inwhich the one or more the laser grooves extend, the cross section havinga V shape or a U shape, and wherein a bottom of a second laser grooveamong the one or more laser groove is positioned to be closer to thelocking portion than a center of a width of the second laser groove. 5.The semiconductor module according to claim 4, wherein a direction ofthe laser irradiation relative to the groove region of the upper surfaceof the protrusion where the second laser groove is formed is slantedfrom a perpendicular line passing through the groove region of the uppersurface of the protrusion toward the chip region where the semiconductorchip is disposed.
 6. The semiconductor module according to claim 1,wherein the laser irradiation roughens inner surfaces and edge portionsof the one or more laser grooves to prevent the conductive connectionmember for die pad on the upper surface of the die pad frame fromspreading by getting wet.
 7. The semiconductor module according to claim1, wherein the die pad frame has a first side, a second side, one end ofwhich intersects one end of the first side, a third side, one end ofwhich intersects another end of the first side, and a fourth side, oneend of which intersects another side of the second side and another sideof which intersects another end of the third side, wherein theprotrusion and the locking portion are formed in a region along thefirst side, the second side, and the third side, and not formed in aregion along the fourth side, wherein the region along the fourth sideof the upper surface of the die pad frame has a through-hole passingthrough the main body and improving adhesion with the sealing resin,wherein the one or more laser grooves are formed by the laserirradiation on the upper surface of the protrusion along the first side,the second side, and the third side of the die pad frame, and whereinone or more additional laser grooves are formed by laser irradiationalong the fourth side between the region where the through-hole isformed and the chip region.
 8. The semiconductor module according toclaim 7, wherein the one or more laser grooves are sequentially disposedalong the first side, the second side, and the third side of the die padframe, and wherein the number of additional laser grooves is greaterthan the number of lines formed by the one or more laser grooves.
 9. Thesemiconductor module according to claim 7, wherein the one or more lasergrooves are in communication with the one or more additional lasergroove to surround a perimeter of the chip region of the die pad framewhere the semiconductor chip is disposed.
 10. The semiconductor moduleaccording to claim 1, wherein a conductive metal material of the die padframe is a copper-based alloy or a copper-based alloy to which adifferent metal selected from Sn, Zn, Fe, Cr, and Ni is added, andwherein a surface of the die pad frame are not plated.